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Quantitative Analysis of Memristance Defined Exponential Model for Multi-bits Titanium Dioxide Memristor Memory CellDAOUD, A. A. D. , DESSOUKI, A. A. S. , ABUELENIN, S. M.
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analytical models, memristors, nonvolatile memory, SPICE, tunneling
memristor(20), circuits(11), systems(9), model(6), devices(5), spice(4), physics(4), modeling(4), memristive(4), device(4)
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About this article
Date of Publication: 2016-05-31
Volume 16, Issue 2, Year 2016, On page(s): 75 - 84
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2016.02011
Web of Science Accession Number: 000376996100011
SCOPUS ID: 84974855611
The ability to store multiple bits in a single memristor based memory cell is a key feature for high-capacity memory packages. Studying multi-bit memristor circuits requires high accuracy in modelling the memristance change. A memristor model based on a novel definition of memristance is proposed. A design of a single memristor memory cell using the proposed model for the platinum electrodes titanium dioxide memristor is illustrated. A specific voltage pulse is used with varying its parameters (amplitude or pulse width) to store different number of states in a single memristor. New state variation parameters associated with the utilized model are provided and their effects on write and read processes of memristive multi-states are analysed. PSPICE simulations are also held, and they show a good agreement with the data obtained from the analysis.
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