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Quantitative Analysis of Memristance Defined Exponential Model for Multi-bits Titanium Dioxide Memristor Memory CellDAOUD, A. A. D.   , DESSOUKI, A. A. S. , ABUELENIN, S. M. |
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Author keywords
analytical models, memristors, nonvolatile memory, SPICE, tunneling
References keywords
memristor(20), circuits(11), systems(9), model(6), devices(5), spice(4), physics(4), modeling(4), memristive(4), device(4)
Blue keywords are present in both the references section and the paper title.
About this article
Date of Publication: 2016-05-31
Volume 16, Issue 2, Year 2016, On page(s): 75 - 84
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2016.02011
Web of Science Accession Number: 000376996100011
SCOPUS ID: 84974855611
Abstract
The ability to store multiple bits in a single memristor based memory cell is a key feature for high-capacity memory packages. Studying multi-bit memristor circuits requires high accuracy in modelling the memristance change. A memristor model based on a novel definition of memristance is proposed. A design of a single memristor memory cell using the proposed model for the platinum electrodes titanium dioxide memristor is illustrated. A specific voltage pulse is used with varying its parameters (amplitude or pulse width) to store different number of states in a single memristor. New state variation parameters associated with the utilized model are provided and their effects on write and read processes of memristive multi-states are analysed. PSPICE simulations are also held, and they show a good agreement with the data obtained from the analysis. |
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| [1] L. O. Chua, "Memristor-the missing circuit element," Circuit Theory, IEEE Transactions on, vol. 18, pp. 507-519, 1971. [CrossRef] [SCOPUS Times Cited 7580] [2] Y. Urata, Y. Takahashi, T. Sekine, and N. A. Nayan, "A low-power sense amplifier for adiabatic memory using memristor," in Circuits and Systems (APCCAS), 2012 IEEE Asia Pacific Conference on, 2012, pp. 112-115. [CrossRef] [SCOPUS Times Cited 3] [3] L. Zheng, S. Shin, and S.-M. S. Kang, "Memristor-based ternary content addressable memory (mTCAM) for data-intensive computing," Semiconductor Science and Technology, vol. 29, p. 104010, 2014. [CrossRef] [Web of Science Times Cited 20] [SCOPUS Times Cited 24] [4] M. S. Qureshi, M. Pickett, F. Miao, and J. P. Strachan, "CMOS interface circuits for reading and writing memristor crossbar array," in Circuits and systems (ISCAS), 2011 IEEE international symposium on, 2011, pp. 2954-2957. [CrossRef] [SCOPUS Times Cited 52] [5] A. Emara, M. Ghoneima, and M. El-Dessouky, "Differential 1T2M memristor memory cell for single/multi-bit RRAM modules," in Computer Science and Electronic Engineering Conference (CEEC), 2014 6th, 2014, pp. 69-72. [CrossRef] [SCOPUS Times Cited 19] [6] D. Fey, "Using the multi-bit feature of memristors for register files in signed-digit arithmetic units," Semiconductor Science and Technology, vol. 29, p. 104008, 2014. [CrossRef] [Web of Science Times Cited 25] [SCOPUS Times Cited 26] [7] S. Smaili and Y. Massoud, "Differential pair sense amplifier for a robust reading scheme for memristor-based memories," in Circuits and Systems (ISCAS), 2013 IEEE International Symposium on, 2013, pp. 1676-1679. [CrossRef] [SCOPUS Times Cited 4] [8] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," nature, vol. 453, pp. 80-83, 2008. [CrossRef] [Web of Science Times Cited 8102] [SCOPUS Times Cited 9067] [9] R. E. Pino, J. W. Bohl, N. McDonald, B. Wysocki, P. Rozwood, K. A. Campbell, et al., "Compact method for modeling and simulation of memristor devices: ion conductor chalcogenide-based memristor devices," in Nanoscale Architectures (NANOARCH), 2010 IEEE/ACM International Symposium on, 2010, pp. 1-4. [CrossRef] [SCOPUS Times Cited 66] [10] C. Yakopcic, T. M. Taha, G. Subramanyam, R. E. Pino, and S. Rogers, "A memristor device model," IEEE electron device letters, vol. 32, pp. 1436-1438, 2011. [CrossRef] [Web of Science Times Cited 214] [SCOPUS Times Cited 251] [11] Á. Rák and G. Cserey, "Macromodeling of the memristor in SPICE," Computer-aided design of integrated circuits and systems, IEEE Transactions on, vol. 29, pp. 632-636, 2010. [CrossRef] [Web of Science Times Cited 194] [SCOPUS Times Cited 229] [12] S. Kvatinsky, E. G. Friedman, A. Kolodny, and U. C. Weiser, "TEAM: threshold adaptive memristor model," Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 60, pp. 211-221, 2013. [CrossRef] [Web of Science Times Cited 518] [SCOPUS Times Cited 643] [13] Y. N. Joglekar and S. J. Wolf, "The elusive memristor: properties of basic electrical circuits," European Journal of Physics, vol. 30, p. 661, 2009. [CrossRef] [Web of Science Times Cited 609] [SCOPUS Times Cited 738] [14] F. Corinto and A. Ascoli, "A boundary condition-based approach to the modeling of memristor nanostructures," Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 59, pp. 2713-2726, 2012. [CrossRef] [Web of Science Times Cited 112] [SCOPUS Times Cited 144] [15] Z. Biolek, D. Biolek, and V. Biolkova, "SPICE model of memristor with nonlinear dopant drift," Radioengineering, vol. 18, pp. 210-214, 2009. [16] H. Abdalla and M. D. Pickett, "SPICE modeling of memristors," in Circuits and Systems (ISCAS), 2011 IEEE International Symposium on, 2011, pp. 1832-1835. [CrossRef] [SCOPUS Times Cited 211] [17] T. Xiao-Bo and X. Hui, "Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier," Chinese Physics B, vol. 23, p. 068401, 2014. [CrossRef] [Web of Science Times Cited 6] [SCOPUS Times Cited 9] [18] T. Prodromakis, B. P. Peh, C. Papavassiliou, and C. Toumazou, "A versatile memristor model with nonlinear dopant kinetics," Electron Devices, IEEE Transactions on, vol. 58, pp. 3099-3105, 2011. [CrossRef] [Web of Science Times Cited 288] [SCOPUS Times Cited 363] [19] A. Ascoli, F. Corinto, V. Senger, and R. Tetzlaff, "Memristor model comparison," Circuits and Systems Magazine, IEEE, vol. 13, pp. 89-105, 2013. . [CrossRef] [Web of Science Times Cited 135] [SCOPUS Times Cited 162] [20] S. Shin, K. Kim, and S. Kang, "Memristor applications for programmable analog ICs," Nanotechnology, IEEE Transactions on, vol. 10, pp. 266-274, 2011. [CrossRef] [Web of Science Times Cited 279] [SCOPUS Times Cited 335] [21] C. Yakopcic, T. M. Taha, G. Subramanyam, and R. E. Pino, "Generalized memristive device SPICE model and its application in circuit design," Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on, vol. 32, pp. 1201-1214, 2013. [CrossRef] [Web of Science Times Cited 169] [SCOPUS Times Cited 195] [22] M. Laiho, E. Lehtonen, A. Russell, and P. Dudek, "Memristive synapses are becoming reality," The Neuromorphic Engineer, 2010. [CrossRef] [23] T. Chang, S.-H. Jo, K.-H. Kim, P. Sheridan, S. Gaba, and W. Lu, "Synaptic behaviors and modeling of a metal oxide memristive device," Applied physics A, vol. 102, pp. 857-863, 2011. [CrossRef] [Web of Science Times Cited 324] [SCOPUS Times Cited 331] [24] M. D. Pickett, D. B. Strukov, J. L. Borghetti, J. J. Yang, G. S. Snider, D. R. Stewart, et al., "Switching dynamics in titanium dioxide memristive devices," Journal of Applied Physics, vol. 106, p. 074508, 2009. [CrossRef] [Web of Science Times Cited 458] [SCOPUS Times Cited 621] [25] C. Yakopcic, "Memristor devices: Fabrication, Characterization, Simulation, and Circuit Design", pp. 56-57, University of Dayton, August, 2011. Web of Science® Citations for all references: 11,453 TCR SCOPUS® Citations for all references: 21,073 TCR Web of Science® Average Citations per reference: 458 ACR SCOPUS® Average Citations per reference: 843 ACR TCR = Total Citations for References / ACR = Average Citations per Reference We introduced in 2010 - for the first time in scientific publishing, the term "References Weight", as a quantitative indication of the quality ... Read more Citations for references updated on 2024-04-24 16:29 in 154 seconds. Note1: Web of Science® is a registered trademark of Clarivate Analytics. Note2: SCOPUS® is a registered trademark of Elsevier B.V. Disclaimer: All queries to the respective databases were made by using the DOI record of every reference (where available). Due to technical problems beyond our control, the information is not always accurate. 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Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania
All rights reserved: Advances in Electrical and Computer Engineering is a registered trademark of the Stefan cel Mare University of Suceava. No part of this publication may be reproduced, stored in a retrieval system, photocopied, recorded or archived, without the written permission from the Editor. When authors submit their papers for publication, they agree that the copyright for their article be transferred to the Faculty of Electrical Engineering and Computer Science, Stefan cel Mare University of Suceava, Romania, if and only if the articles are accepted for publication. The copyright covers the exclusive rights to reproduce and distribute the article, including reprints and translations.
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Disclaimer: Whilst every effort is made by the publishers and editorial board to see that no inaccurate or misleading data, opinions or statements appear in this journal, they wish to make it clear that all information and opinions formulated in the articles, as well as linguistic accuracy, are the sole responsibility of the author.
