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Stefan cel Mare
University of Suceava
Faculty of Electrical Engineering and
Computer Science
13, Universitatii Street
Suceava - 720229
ROMANIA

Print ISSN: 1582-7445
Online ISSN: 1844-7600
WorldCat: 643243560
doi: 10.4316/AECE


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2019-Jun-20
Clarivate Analytics published the InCites Journal Citations Report for 2018. The JCR Impact Factor of Advances in Electrical and Computer Engineering is 0.650, and the JCR 5-Year Impact Factor is 0.639.

2018-May-31
Starting today, the minimum number a pages for a paper is 8, so all submitted papers should have 8, 10 or 12 pages. No exceptions will be accepted.

2018-Jun-27
Clarivate Analytics published the InCites Journal Citations Report for 2017. The JCR Impact Factor of Advances in Electrical and Computer Engineering is 0.699, and the JCR 5-Year Impact Factor is 0.674.

2017-Jun-14
Thomson Reuters published the Journal Citations Report for 2016. The JCR Impact Factor of Advances in Electrical and Computer Engineering is 0.595, and the JCR 5-Year Impact Factor is 0.661.

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  2/2016 - 11

Quantitative Analysis of Memristance Defined Exponential Model for Multi-bits Titanium Dioxide Memristor Memory Cell

DAOUD, A. A. D. See more information about DAOUD, A. A. D. on SCOPUS See more information about DAOUD, A. A. D. on IEEExplore See more information about DAOUD, A. A. D. on Web of Science, DESSOUKI, A. A. S. See more information about  DESSOUKI, A. A. S. on SCOPUS See more information about  DESSOUKI, A. A. S. on SCOPUS See more information about DESSOUKI, A. A. S. on Web of Science, ABUELENIN, S. M. See more information about ABUELENIN, S. M. on SCOPUS See more information about ABUELENIN, S. M. on SCOPUS See more information about ABUELENIN, S. M. on Web of Science
 
Click to see author's profile in See more information about the author on SCOPUS SCOPUS, See more information about the author on IEEE Xplore IEEE Xplore, See more information about the author on Web of Science Web of Science

Download PDF pdficon (1,465 KB) | Citation | Downloads: 274 | Views: 1,282

Author keywords
analytical models, memristors, nonvolatile memory, SPICE, tunneling

References keywords
memristor(20), circuits(11), systems(9), model(6), devices(5), spice(4), physics(4), modeling(4), memristive(4), device(4)
Blue keywords are present in both the references section and the paper title.

About this article
Date of Publication: 2016-05-31
Volume 16, Issue 2, Year 2016, On page(s): 75 - 84
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2016.02011
Web of Science Accession Number: 000376996100011
SCOPUS ID: 84974855611

Abstract
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Full text preview
The ability to store multiple bits in a single memristor based memory cell is a key feature for high-capacity memory packages. Studying multi-bit memristor circuits requires high accuracy in modelling the memristance change. A memristor model based on a novel definition of memristance is proposed. A design of a single memristor memory cell using the proposed model for the platinum electrodes titanium dioxide memristor is illustrated. A specific voltage pulse is used with varying its parameters (amplitude or pulse width) to store different number of states in a single memristor. New state variation parameters associated with the utilized model are provided and their effects on write and read processes of memristive multi-states are analysed. PSPICE simulations are also held, and they show a good agreement with the data obtained from the analysis.


References | Cited By  «-- Click to see who has cited this paper

[1] L. O. Chua, "Memristor-the missing circuit element," Circuit Theory, IEEE Transactions on, vol. 18, pp. 507-519, 1971.
[CrossRef]


[2] Y. Urata, Y. Takahashi, T. Sekine, and N. A. Nayan, "A low-power sense amplifier for adiabatic memory using memristor," in Circuits and Systems (APCCAS), 2012 IEEE Asia Pacific Conference on, 2012, pp. 112-115.
[CrossRef]


[3] L. Zheng, S. Shin, and S.-M. S. Kang, "Memristor-based ternary content addressable memory (mTCAM) for data-intensive computing," Semiconductor Science and Technology, vol. 29, p. 104010, 2014.
[CrossRef] [Web of Science Times Cited 12]


[4] M. S. Qureshi, M. Pickett, F. Miao, and J. P. Strachan, "CMOS interface circuits for reading and writing memristor crossbar array," in Circuits and systems (ISCAS), 2011 IEEE international symposium on, 2011, pp. 2954-2957.
[CrossRef]


[5] A. Emara, M. Ghoneima, and M. El-Dessouky, "Differential 1T2M memristor memory cell for single/multi-bit RRAM modules," in Computer Science and Electronic Engineering Conference (CEEC), 2014 6th, 2014, pp. 69-72.
[CrossRef]


[6] D. Fey, "Using the multi-bit feature of memristors for register files in signed-digit arithmetic units," Semiconductor Science and Technology, vol. 29, p. 104008, 2014.
[CrossRef] [Web of Science Times Cited 11]


[7] S. Smaili and Y. Massoud, "Differential pair sense amplifier for a robust reading scheme for memristor-based memories," in Circuits and Systems (ISCAS), 2013 IEEE International Symposium on, 2013, pp. 1676-1679.
[CrossRef]


[8] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," nature, vol. 453, pp. 80-83, 2008.
[CrossRef] [Web of Science Times Cited 4616]


[9] R. E. Pino, J. W. Bohl, N. McDonald, B. Wysocki, P. Rozwood, K. A. Campbell, et al., "Compact method for modeling and simulation of memristor devices: ion conductor chalcogenide-based memristor devices," in Nanoscale Architectures (NANOARCH), 2010 IEEE/ACM International Symposium on, 2010, pp. 1-4.
[CrossRef]


[10] C. Yakopcic, T. M. Taha, G. Subramanyam, R. E. Pino, and S. Rogers, "A memristor device model," IEEE electron device letters, vol. 32, pp. 1436-1438, 2011.
[CrossRef] [Web of Science Times Cited 118]


[11] Á. Rák and G. Cserey, "Macromodeling of the memristor in SPICE," Computer-aided design of integrated circuits and systems, IEEE Transactions on, vol. 29, pp. 632-636, 2010.
[CrossRef] [Web of Science Times Cited 153]


[12] S. Kvatinsky, E. G. Friedman, A. Kolodny, and U. C. Weiser, "TEAM: threshold adaptive memristor model," Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 60, pp. 211-221, 2013.
[CrossRef] [Web of Science Times Cited 262]


[13] Y. N. Joglekar and S. J. Wolf, "The elusive memristor: properties of basic electrical circuits," European Journal of Physics, vol. 30, p. 661, 2009.
[CrossRef] [Web of Science Times Cited 396]


[14] F. Corinto and A. Ascoli, "A boundary condition-based approach to the modeling of memristor nanostructures," Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 59, pp. 2713-2726, 2012.
[CrossRef] [Web of Science Times Cited 80]


[15] Z. Biolek, D. Biolek, and V. Biolkova, "SPICE model of memristor with nonlinear dopant drift," Radioengineering, vol. 18, pp. 210-214, 2009.

[16] H. Abdalla and M. D. Pickett, "SPICE modeling of memristors," in Circuits and Systems (ISCAS), 2011 IEEE International Symposium on, 2011, pp. 1832-1835.
[CrossRef]


[17] T. Xiao-Bo and X. Hui, "Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier," Chinese Physics B, vol. 23, p. 068401, 2014.
[CrossRef] [Web of Science Times Cited 6]


[18] T. Prodromakis, B. P. Peh, C. Papavassiliou, and C. Toumazou, "A versatile memristor model with nonlinear dopant kinetics," Electron Devices, IEEE Transactions on, vol. 58, pp. 3099-3105, 2011.
[CrossRef] [Web of Science Times Cited 173]


[19] A. Ascoli, F. Corinto, V. Senger, and R. Tetzlaff, "Memristor model comparison," Circuits and Systems Magazine, IEEE, vol. 13, pp. 89-105, 2013. .
[CrossRef] [Web of Science Times Cited 80]


[20] S. Shin, K. Kim, and S. Kang, "Memristor applications for programmable analog ICs," Nanotechnology, IEEE Transactions on, vol. 10, pp. 266-274, 2011.
[CrossRef] [Web of Science Times Cited 188]


[21] C. Yakopcic, T. M. Taha, G. Subramanyam, and R. E. Pino, "Generalized memristive device SPICE model and its application in circuit design," Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on, vol. 32, pp. 1201-1214, 2013.
[CrossRef] [Web of Science Times Cited 77]


[22] M. Laiho, E. Lehtonen, A. Russell, and P. Dudek, "Memristive synapses are becoming reality," The Neuromorphic Engineer, 2010.
[CrossRef]


[23] T. Chang, S.-H. Jo, K.-H. Kim, P. Sheridan, S. Gaba, and W. Lu, "Synaptic behaviors and modeling of a metal oxide memristive device," Applied physics A, vol. 102, pp. 857-863, 2011.
[CrossRef] [Web of Science Times Cited 178]


[24] M. D. Pickett, D. B. Strukov, J. L. Borghetti, J. J. Yang, G. S. Snider, D. R. Stewart, et al., "Switching dynamics in titanium dioxide memristive devices," Journal of Applied Physics, vol. 106, p. 074508, 2009.
[CrossRef] [Web of Science Times Cited 317]


[25] C. Yakopcic, "Memristor devices: Fabrication, Characterization, Simulation, and Circuit Design", pp. 56-57, University of Dayton, August, 2011.

References Weight

Web of Science® Citations for all references: 6,667 TCR
SCOPUS® Citations for all references: 0

Web of Science® Average Citations per reference: 267 ACR
SCOPUS® Average Citations per reference: 0

TCR = Total Citations for References / ACR = Average Citations per Reference

We introduced in 2010 - for the first time in scientific publishing, the term "References Weight", as a quantitative indication of the quality ... Read more

Citations for references updated on 2019-08-20 06:29 in 157 seconds.




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Disclaimer: All queries to the respective databases were made by using the DOI record of every reference (where available). Due to technical problems beyond our control, the information is not always accurate. Please use the CrossRef link to visit the respective publisher site.

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Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania


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