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Stefan cel Mare
University of Suceava
Faculty of Electrical Engineering and
Computer Science
13, Universitatii Street
Suceava - 720229

Print ISSN: 1582-7445
Online ISSN: 1844-7600
WorldCat: 643243560
doi: 10.4316/AECE


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  2/2008 - 2

Structure for Improving Short-Circuit Capability and the Method for Protecting the IGBT Devices

HALLOUCHE, A. See more information about HALLOUCHE, A. on SCOPUS See more information about HALLOUCHE, A. on IEEExplore See more information about HALLOUCHE, A. on Web of Science, TILMATINE, A. See more information about TILMATINE, A. on SCOPUS See more information about TILMATINE, A. on SCOPUS See more information about TILMATINE, A. on Web of Science
Click to see author's profile in See more information about the author on SCOPUS SCOPUS, See more information about the author on IEEE Xplore IEEE Xplore, See more information about the author on Web of Science Web of Science

Download PDF pdficon (455 KB) | Citation | Downloads: 924 | Views: 3,897

Author keywords
IGBT, fault under load, Fault current, short-circuit capability, improving, protection

References keywords
power(8), circuit(7), igbt(6), short(4)
Blue keywords are present in both the references section and the paper title.

About this article
Date of Publication: 2008-06-02
Volume 8, Issue 2, Year 2008, On page(s): 11 - 14
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2008.02002
Web of Science Accession Number: 000264815000002
SCOPUS ID: 77954340401

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Full text preview
A short-circuit is a serious situation in a circuit. That is why the determination of the fault current during the operation of the IGBT requires suitable gestures in order to realise a better and reliable operation for the power converters. Thus, it is necessary to know the extreme operating limits for these devices since the use of the IGBT in power converters often subjects them to certain significant electric constraints such as, the short-circuit and the turn OFF on the inductive load. This paper presents then a means of protection for a safe and precise shutdown of the fault current in the device. This circuit allows the IGBT to operate without risks, and permits a reduction of the conduction losses in the device without compromising the characteristics of protection of the short-circuit.

References | Cited By  «-- Click to see who has cited this paper

[1] M. Ciappa, "Selected failure mechanisms of modern power modules", Microelectronics reliability, vol. 42, no. 4-5, pp. 653-667, 2002.
[CrossRef] [Web of Science Times Cited 502]

[2] R. L. Cassel et al., "A New Type Short Circuit Failures of High Power IGBTs", Proc. of the Pulsed Power Plasma Science, Las Vegas, Nevada, pp. 322- 324, 2001.

[3] A. Hallouche, A. Tilmatine, "Thermal impact on the power device behaviour: application on the IGBT", Advances in Electrical and Computer Engineering, vol. 7, no. 1, pp. 9-12, 2007.
[CrossRef] [Full Text] [Web of Science Times Cited 6]

[4] J. Leclercq, "Electronique de puissance : elements de technologie", Technique de l'ingenieur, vol. D5, no. D3220, pp. 1 - 24, 1994.

[5] P. Le Turcq, "A Study of Distributed Switching Processes in IGBTs and Other Power Bipolar Devices", IEEE the 28 Annual Power Electronics Specialists Conference, vol.1, pp. 139-147, 1997.

[6] J. Vallon, "Introduction a l'etude de la fiabilite des cellules de commutation a IGBT sous fortes contraintes", These de doctorat, L'Institut National Polytechnique de Toulouse, 2003.

[7] J.-P. Petit, "Dissipation thermique dans les systemes electroniques", Technique de l'ingenieur, vol. E, no. E3952, pp. 1-16, 2001.

[8] Fuji IGBT Modules Application Manual, "Protection Circuit Design," Fuji Electric Device Technology Co., Ltd. February 2004.

[9] F. Z. Peng, G.-J. Su, and L. M. Tolbert, "A Passive Soft Switching Snubber for PWM Inverters," IEEE Trans. On Power Electronics, vol. 19, no. 2, 2004.
[CrossRef] [Web of Science Times Cited 30]

[10] F. Saint-Eve, S. Lefebvre, Z. Khatir, "Comportment de transistors IGBT en regime repetitif de court-circuit" Revue Internationale de Genie Electrique, ed. Hermes, 2004

[11] B. Gutsmann, P. Kanschat, M. Munzer, M. Pfaffenlehner, T. Laska, "Repetitive short circuit behaviour of trench/field stop IGBT", PCIM 2003

[12] H. Nakamura, et al., "Wide cell pitch 1200V NPT CSTBTs With Short Circuit Ruggedness", International Symposium on Power Semiconductor Devices and ICs 2001.

[13] B. R. Pelly, "Circuit and Method for Improving Short-Circuit Capability of IGBT", International Rectifier, California, 2000.

References Weight

Web of Science® Citations for all references: 538 TCR
SCOPUS® Citations for all references: 0

Web of Science® Average Citations per reference: 41 ACR
SCOPUS® Average Citations per reference: 0

TCR = Total Citations for References / ACR = Average Citations per Reference

We introduced in 2010 - for the first time in scientific publishing, the term "References Weight", as a quantitative indication of the quality ... Read more

Citations for references updated on 2021-01-18 09:50 in 27 seconds.

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Disclaimer: All queries to the respective databases were made by using the DOI record of every reference (where available). Due to technical problems beyond our control, the information is not always accurate. Please use the CrossRef link to visit the respective publisher site.

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