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Silicon Single Crystal Behaviour In Electrical FieldsMarinela Petronela AGA
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About this article
Date of Publication: 2001-04-02
Volume 1, Issue 1, Year 2001, On page(s): 48 - 50
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: Not assigned
This paper is a study of electrical proprieties silicon single crystal in the range 0,5 Hz - 100 MHz using non-destructive techniques with q-meter. We found that the response of materials is dependent on growth conditions. Therefore, resistivity peak of high-doped CZ silicon is due to leakage on ionic charged impurities. On the other hand, FZ silicon has a dielectric relaxation.
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Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania
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