| 2/2008 - 2 |
Structure for Improving Short-Circuit Capability and the Method for Protecting the IGBT DevicesHALLOUCHE, A.   , TILMATINE, A. |
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Author keywords
IGBT, fault under load, Fault current, short-circuit capability, improving, protection
References keywords
power(8), circuit(7), igbt(6), short(4)
Blue keywords are present in both the references section and the paper title.
About this article
Date of Publication: 2008-06-02
Volume 8, Issue 2, Year 2008, On page(s): 11 - 14
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2008.02002
Web of Science Accession Number: 000264815000002
SCOPUS ID: 77954340401
Abstract
A short-circuit is a serious situation in a circuit. That is why the determination of the fault current during the operation of the IGBT requires suitable gestures in order to realise a better and reliable operation for the power converters. Thus, it is necessary to know the extreme operating limits for these devices since the use of the IGBT in power converters often subjects them to certain significant electric constraints such as, the short-circuit and the turn OFF on the inductive load. This paper presents then a means of protection for a safe and precise shutdown of the fault current in the device. This circuit allows the IGBT to operate without risks, and permits a reduction of the conduction losses in the device without compromising the characteristics of protection of the short-circuit. |
| References | | | Cited By «-- Click to see who has cited this paper |
| [1] M. Ciappa, "Selected failure mechanisms of modern power modules", Microelectronics reliability, vol. 42, no. 4-5, pp. 653-667, 2002. [CrossRef] [Web of Science Times Cited 656] [SCOPUS Times Cited 917] [2] R. L. Cassel et al., "A New Type Short Circuit Failures of High Power IGBTs", Proc. of the Pulsed Power Plasma Science, Las Vegas, Nevada, pp. 322- 324, 2001. [3] A. Hallouche, A. Tilmatine, "Thermal impact on the power device behaviour: application on the IGBT", Advances in Electrical and Computer Engineering, vol. 7, no. 1, pp. 9-12, 2007. [CrossRef] [Full Text] [Web of Science Times Cited 6] [4] J. Leclercq, "Electronique de puissance : elements de technologie", Technique de l'ingenieur, vol. D5, no. D3220, pp. 1 - 24, 1994. [5] P. Le Turcq, "A Study of Distributed Switching Processes in IGBTs and Other Power Bipolar Devices", IEEE the 28 Annual Power Electronics Specialists Conference, vol.1, pp. 139-147, 1997. [CrossRef] [6] J. Vallon, "Introduction a l'etude de la fiabilite des cellules de commutation a IGBT sous fortes contraintes", These de doctorat, L'Institut National Polytechnique de Toulouse, 2003. [7] J.-P. Petit, "Dissipation thermique dans les systemes electroniques", Technique de l'ingenieur, vol. E, no. E3952, pp. 1-16, 2001. [8] Fuji IGBT Modules Application Manual, "Protection Circuit Design," Fuji Electric Device Technology Co., Ltd. February 2004. [9] F. Z. Peng, G.-J. Su, and L. M. Tolbert, "A Passive Soft Switching Snubber for PWM Inverters," IEEE Trans. On Power Electronics, vol. 19, no. 2, 2004. [CrossRef] [Web of Science Times Cited 35] [SCOPUS Times Cited 54] [10] F. Saint-Eve, S. Lefebvre, Z. Khatir, "Comportment de transistors IGBT en regime repetitif de court-circuit" Revue Internationale de Genie Electrique, ed. Hermes, 2004 [11] B. Gutsmann, P. Kanschat, M. Munzer, M. Pfaffenlehner, T. Laska, "Repetitive short circuit behaviour of trench/field stop IGBT", PCIM 2003 [12] H. Nakamura, et al., "Wide cell pitch 1200V NPT CSTBTs With Short Circuit Ruggedness", International Symposium on Power Semiconductor Devices and ICs 2001. [13] B. R. Pelly, "Circuit and Method for Improving Short-Circuit Capability of IGBT", International Rectifier, California, 2000. Web of Science® Citations for all references: 697 TCR SCOPUS® Citations for all references: 971 TCR Web of Science® Average Citations per reference: 54 ACR SCOPUS® Average Citations per reference: 75 ACR TCR = Total Citations for References / ACR = Average Citations per Reference We introduced in 2010 - for the first time in scientific publishing, the term "References Weight", as a quantitative indication of the quality ... Read more Citations for references updated on 2024-10-04 13:43 in 30 seconds. Note1: Web of Science® is a registered trademark of Clarivate Analytics. Note2: SCOPUS® is a registered trademark of Elsevier B.V. Disclaimer: All queries to the respective databases were made by using the DOI record of every reference (where available). Due to technical problems beyond our control, the information is not always accurate. Please use the CrossRef link to visit the respective publisher site. |
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Stefan cel Mare University of Suceava, Romania
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Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania
All rights reserved: Advances in Electrical and Computer Engineering is a registered trademark of the Stefan cel Mare University of Suceava. No part of this publication may be reproduced, stored in a retrieval system, photocopied, recorded or archived, without the written permission from the Editor. When authors submit their papers for publication, they agree that the copyright for their article be transferred to the Faculty of Electrical Engineering and Computer Science, Stefan cel Mare University of Suceava, Romania, if and only if the articles are accepted for publication. The copyright covers the exclusive rights to reproduce and distribute the article, including reprints and translations.
Permission for other use: The copyright owner's consent does not extend to copying for general distribution, for promotion, for creating new works, or for resale. Specific written permission must be obtained from the Editor for such copying. Direct linking to files hosted on this website is strictly prohibited.
Disclaimer: Whilst every effort is made by the publishers and editorial board to see that no inaccurate or misleading data, opinions or statements appear in this journal, they wish to make it clear that all information and opinions formulated in the articles, as well as linguistic accuracy, are the sole responsibility of the author.
