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JCR Impact Factor: 0.459
JCR 5-Year IF: 0.442
Issues per year: 4
Current issue: Nov 2016
Next issue: Feb 2017
Avg review time: 95 days


PUBLISHER

Stefan cel Mare
University of Suceava
Faculty of Electrical Engineering and
Computer Science
13, Universitatii Street
Suceava - 720229
ROMANIA

Print ISSN: 1582-7445
Online ISSN: 1844-7600
WorldCat: 644266260
doi: 10.4316/AECE


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LATEST NEWS

2016-Jun-14
Thomson Reuters published the Journal Citations Report for 2015. The JCR Impact Factor of Advances in Electrical and Computer Engineering is 0.459, and the JCR 5-Year Impact Factor is 0.442.

2015-Dec-04
Starting with Issue 2/2016, the article processing charge is 300 EUR for each article accepted for publication. The charge of 25 EUR per page for papers over 8 pages will not be changed. Details are available in the For authors section.

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  3/2016 - 1
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Extracting Impurity Locations using Scanning Capacitance Microscopy Measurements

AGHAEI, S. See more information about AGHAEI, S. on SCOPUS See more information about AGHAEI, S. on IEEExplore See more information about AGHAEI, S. on Web of Science, ANDREI, P. See more information about  ANDREI, P. on SCOPUS See more information about  ANDREI, P. on SCOPUS See more information about ANDREI, P. on Web of Science, HAGMANN, M. See more information about HAGMANN, M. on SCOPUS See more information about HAGMANN, M. on SCOPUS See more information about HAGMANN, M. on Web of Science
 
Click to see author's profile on See more information about the author on SCOPUS SCOPUS, See more information about the author on IEEE Xplore IEEE Xplore, See more information about the author on Web of Science Web of Science

Download PDF pdficon (1,794 KB) | Citation | Downloads: 511 | Views: 297

Author keywords
doping, fluctuations, ion implantation, nanoscale devices, scanning probe microscopy

References keywords
analysis(11), devices(9), capacitance(9), scanning(8), microscopy(8), ipfa(8), failure(8), dopant(8), semiconductor(7), random(5)
Blue keywords are present in both the references section and the paper title.

About this article
Date of Publication: 2016-08-31
Volume 16, Issue 3, Year 2016, On page(s): 3 - 8
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2016.03001
Web of Science Accession Number: 000384750000001
SCOPUS ID: 84991047753

Abstract
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In this article we investigate the possibility to use scanning capacitance microscopy (SCM) for the 2-D and 3-D atomistic dopant profiling of semiconductor materials. For this purpose, we first analyze the effects of random dopant fluctuations (RDF) on SCM measurements with nanoscale probes and show that the discrete and random locations of dopant impurities significantly affect the differential capacitance measured in SCM experiments if the dimension of the probe is below 50 nm. Then, we present an algorithm to compute the x, y, and z coordinates of the ionized impurities in the semiconductor material using a set of SCM measurements. The algorithm is based on evaluating the doping sensitivity functions of the differential capacitance and uses a gradient-based iterative method to compute the locations of dopants. Finally, we discuss a standard simulation case and show that we are able to successfully retrieve the locations of the ionized impurities using the proposed algorithm.


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Copyright ©2001-2016
Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania


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