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Extracting Impurity Locations using Scanning Capacitance Microscopy MeasurementsAGHAEI, S. , ANDREI, P. , HAGMANN, M.
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doping, fluctuations, ion implantation, nanoscale devices, scanning probe microscopy
analysis(11), devices(9), capacitance(9), scanning(8), microscopy(8), ipfa(8), failure(8), dopant(8), semiconductor(7), random(5)
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About this article
Date of Publication: 2016-08-31
Volume 16, Issue 3, Year 2016, On page(s): 3 - 8
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2016.03001
Web of Science Accession Number: 000384750000001
SCOPUS ID: 84991047753
In this article we investigate the possibility to use scanning capacitance microscopy (SCM) for the 2-D and 3-D atomistic dopant profiling of semiconductor materials. For this purpose, we first analyze the effects of random dopant fluctuations (RDF) on SCM measurements with nanoscale probes and show that the discrete and random locations of dopant impurities significantly affect the differential capacitance measured in SCM experiments if the dimension of the probe is below 50 nm. Then, we present an algorithm to compute the x, y, and z coordinates of the ionized impurities in the semiconductor material using a set of SCM measurements. The algorithm is based on evaluating the doping sensitivity functions of the differential capacitance and uses a gradient-based iterative method to compute the locations of dopants. Finally, we discuss a standard simulation case and show that we are able to successfully retrieve the locations of the ionized impurities using the proposed algorithm.
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 Simulation of the Frequency Comb Induced by a Periodically Excited Tunnel Junction in Silicon, Zhu, Chen, Andrei, Petru, Hagmann, Mark, 2017 IEEE Workshop on Microelectronics and Electron Devices (WMED), ISBN 978-1-5386-3909-2, 2017.
Digital Object Identifier: 10.1109/WMED.2017.7916934 [CrossRef]
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Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania
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