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PUBLISHER

Stefan cel Mare
University of Suceava
Faculty of Electrical Engineering and
Computer Science
13, Universitatii Street
Suceava - 720229
ROMANIA

Print ISSN: 1582-7445
Online ISSN: 1844-7600
WorldCat: 643243560
doi: 10.4316/AECE


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  3/2016 - 1
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Extracting Impurity Locations using Scanning Capacitance Microscopy Measurements

AGHAEI, S. See more information about AGHAEI, S. on SCOPUS See more information about AGHAEI, S. on IEEExplore See more information about AGHAEI, S. on Web of Science, ANDREI, P. See more information about  ANDREI, P. on SCOPUS See more information about  ANDREI, P. on SCOPUS See more information about ANDREI, P. on Web of Science, HAGMANN, M. See more information about HAGMANN, M. on SCOPUS See more information about HAGMANN, M. on SCOPUS See more information about HAGMANN, M. on Web of Science
 
Click to see author's profile in See more information about the author on SCOPUS SCOPUS, See more information about the author on IEEE Xplore IEEE Xplore, See more information about the author on Web of Science Web of Science

Download PDF pdficon (1,794 KB) | Citation | Downloads: 867 | Views: 1,777

Author keywords
doping, fluctuations, ion implantation, nanoscale devices, scanning probe microscopy

References keywords
analysis(11), devices(9), capacitance(9), scanning(8), microscopy(8), ipfa(8), failure(8), dopant(8), semiconductor(7), random(5)
Blue keywords are present in both the references section and the paper title.

About this article
Date of Publication: 2016-08-31
Volume 16, Issue 3, Year 2016, On page(s): 3 - 8
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2016.03001
Web of Science Accession Number: 000384750000001
SCOPUS ID: 84991047753

Abstract
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In this article we investigate the possibility to use scanning capacitance microscopy (SCM) for the 2-D and 3-D atomistic dopant profiling of semiconductor materials. For this purpose, we first analyze the effects of random dopant fluctuations (RDF) on SCM measurements with nanoscale probes and show that the discrete and random locations of dopant impurities significantly affect the differential capacitance measured in SCM experiments if the dimension of the probe is below 50 nm. Then, we present an algorithm to compute the x, y, and z coordinates of the ionized impurities in the semiconductor material using a set of SCM measurements. The algorithm is based on evaluating the doping sensitivity functions of the differential capacitance and uses a gradient-based iterative method to compute the locations of dopants. Finally, we discuss a standard simulation case and show that we are able to successfully retrieve the locations of the ionized impurities using the proposed algorithm.


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Cited-By ISI Web of Science

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Cited-By CrossRef

SCOPUS® Times Cited: 3
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Cited-By CrossRef

[1] Simulation of the Frequency Comb Induced by a Periodically Excited Tunnel Junction in Silicon, Zhu, Chen, Andrei, Petru, Hagmann, Mark, 2017 IEEE Workshop on Microelectronics and Electron Devices (WMED), ISBN 978-1-5386-3909-2, 2017.
Digital Object Identifier: 10.1109/WMED.2017.7916934
[CrossRef]

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Faculty of Electrical Engineering and Computer Science
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