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Stefan cel Mare
University of Suceava
Faculty of Electrical Engineering and
Computer Science
13, Universitatii Street
Suceava - 720229
ROMANIA

Print ISSN: 1582-7445
Online ISSN: 1844-7600
WorldCat: 644266260
doi: 10.4316/AECE


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  3/2016 - 1
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Extracting Impurity Locations using Scanning Capacitance Microscopy Measurements

AGHAEI, S. See more information about AGHAEI, S. on SCOPUS See more information about AGHAEI, S. on IEEExplore See more information about AGHAEI, S. on Web of Science, ANDREI, P. See more information about  ANDREI, P. on SCOPUS See more information about  ANDREI, P. on SCOPUS See more information about ANDREI, P. on Web of Science, HAGMANN, M. See more information about HAGMANN, M. on SCOPUS See more information about HAGMANN, M. on SCOPUS See more information about HAGMANN, M. on Web of Science
 
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Download PDF pdficon (1,794 KB) | Citation | Downloads: 515 | Views: 304

Author keywords
doping, fluctuations, ion implantation, nanoscale devices, scanning probe microscopy

References keywords
analysis(11), devices(9), capacitance(9), scanning(8), microscopy(8), ipfa(8), failure(8), dopant(8), semiconductor(7), random(5)
Blue keywords are present in both the references section and the paper title.

About this article
Date of Publication: 2016-08-31
Volume 16, Issue 3, Year 2016, On page(s): 3 - 8
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2016.03001
Web of Science Accession Number: 000384750000001
SCOPUS ID: 84991047753

Abstract
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In this article we investigate the possibility to use scanning capacitance microscopy (SCM) for the 2-D and 3-D atomistic dopant profiling of semiconductor materials. For this purpose, we first analyze the effects of random dopant fluctuations (RDF) on SCM measurements with nanoscale probes and show that the discrete and random locations of dopant impurities significantly affect the differential capacitance measured in SCM experiments if the dimension of the probe is below 50 nm. Then, we present an algorithm to compute the x, y, and z coordinates of the ionized impurities in the semiconductor material using a set of SCM measurements. The algorithm is based on evaluating the doping sensitivity functions of the differential capacitance and uses a gradient-based iterative method to compute the locations of dopants. Finally, we discuss a standard simulation case and show that we are able to successfully retrieve the locations of the ionized impurities using the proposed algorithm.


References | Cited By  «-- Click to see who has cited this paper

[1] L. Kosbar, J. Nxumalo, J. Nalaskowski, L. Hupka, C. Molella, J. Liu, G. Totir, K. Fisher, J. Cotte and M. Hopstaken, "Evaluation of emitter profiles and lateral uniformity on crystalline silicon photovoltaic cells using scanning capacitance microscopy," in Proc. 35th IEEE Photovoltaic Specialists Conference (PVSC), Yorktown Heights, New York, 2010, pp. 001737-001741.
[CrossRef] [SCOPUS Record]


[2] H. S. Choi, Y.W. Han and I. S. Chung, "MOSFET implant failure analysis using plane-view scanning capacitance microscopy coupled with nano-probing and TCAD modeling," in Proc. 21th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Marina Bay Sands, Singapore, 2014, pp. 5-8.
[CrossRef]


[3] J. M. Yang, U. Shaislamov, M. S. Hyun, J.H. Yoo, J.W. Kim, N.Y. Kwak, W. Kim and J.K. Park, "Precise comparison of two-dimensional dopant profiles measured by electron holography and scanning capacitance microscopy," in Proc. IEEE Nanotechnology Materials and Devices Conference (NMDC), Jeju, 2011, pp. 240-243.
[CrossRef]


[4] A. C. Keow, I. Bin Hashim and L. N. Sern, "Electrical fault localization and Scanning Capacitance Microscopy (SCM) analysis methodology on high RDSON failure of smart power technology IC device," in Proc. 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China, 2013, pp. 423-426.
[CrossRef] [SCOPUS Times Cited 1]


[5] N. Rodriguez, J. Adrian, C. Grosjean, G. Haller, C. Girardeaux and A. Portavoce, "Evaluation of scanning capacitance microscopy sample preparation by focused ion beam," in Proc. 17th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Wuppertal, Germany, 2006, pp. 1554-1557.
[CrossRef] [Web of Science Times Cited 3] [SCOPUS Times Cited 4]


[6] M. J. Hagmann, P. Andrei, S. Pandey and A. Nahata, "Scanning frequency comb microscopy (SFCM): A new method showing promise for high-resolution carrier profiling in semiconductors," in Proc. 25th Advanced Semiconductor Manufacturing Conference (ASMC), Saratoga Springs, New York, 2014, pp. 213-218.
[CrossRef] [SCOPUS Times Cited 1]


[7] L. S. Shyuan, K. G. C. Siong, L.N. Sern, "SCM application in localized 2D dopant profiling," in Proc. 20th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China, 2013, pp. 615-619.
[CrossRef] [SCOPUS Times Cited 2]


[8] G. Bartolucci, G. M. Sardi, R. Marcelli and E. Proietti, "Analytical evaluation of the capacitance of a conical sensor for micro-nano imaging techniques," in Proc. 6th IEEE International Workshop on Advances in Sensors and Interfaces (IWASI), Gallipoli, Turkey, 2015, pp. 283-287,
[CrossRef] [SCOPUS Times Cited 1]


[9] S. P. Hong, Z.X. Hua, C.K Chung and A. Chin, "Application of scanning capacitance microscopy on SOI wafer in die-level failure analysis" in Proc. 21th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Marina Bay Sands, Singapore, 2014, pp. 46-49,
[CrossRef] [SCOPUS Times Cited 1]


[10] A. Asenov, "Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 &mu m MOSFET's: A 3-D "atomistic" simulation study," IEEE Trans. Electron Devices, vol. 45, pp. 2505-2513, Dec. 1998.
[CrossRef] [Web of Science Times Cited 376] [SCOPUS Times Cited 427]


[11] B. Cheng, S. Roy, G. Roy, F. Adamu-Lema and A. Asenov, "Impact of Intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells," Solid-State Electronics, vol. 49, pp. 740-746, May. 2005.
[CrossRef] [Web of Science Times Cited 58] [SCOPUS Times Cited 73]


[12] P. Andrei, I. Mayergoyz, "Analysis of random-dopant induced fluctuations of frequency characteristics of semiconductor devices," Journal of Applied Physics, vol. 93(8), pp. 4646-4652, Apr. 2003.
[CrossRef] [Web of Science Times Cited 13] [SCOPUS Times Cited 17]


[13] S. Aghaei, M. Mehta, P. Andrei, M. Hagmann, "Challenges and opportunities in atomistic dopant profiling using capacitance-voltage measurements," in Proc. 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), Saratoga Springs, New York, 2014, pp. 19-21.
[CrossRef] [SCOPUS Times Cited 1]


[14] S. Aghaei, P. Andrei, M. Hagmann, "Atomistic dopant profiling using scanning capacitance microscopy," in Proc. IEEE Workshop on Microelectronics and Electron Devices (WMED), Boise, Idaho, 2015, pp. 1-5.
[CrossRef] [SCOPUS Record]


[15] RandFlux 0.5, User guide, Florida State University, http://www.eng.fsu.edu/ms/RandFlux

[16] I. D. Mayergoyz, P.Andrei, "Statistical analysis of semiconductor devices," Journal of Applied Physics, vol. 90(6), pp. 3019-3029, June 2001,
[CrossRef] [Web of Science Times Cited 42] [SCOPUS Times Cited 49]


[17] P. Andrei, I. Mayergoyz, "Quantum mechanical effects on random oxide thickness and random doping induced fluctuations in ultrasmall semiconductor devices," Journal of Applied Physics, vol. 94(11), pp. 7163-7172, Nov. 2003,
[CrossRef] [Web of Science Times Cited 30] [SCOPUS Times Cited 32]


[18] A. Wettstein, O. Penzin, E. Lyumkis and W. Fichtner, "Random dopant fluctuation modelling with the impedance field method," in Proc. of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Boston, Massachusetts, 2003, pp. 91-94.
[CrossRef] [SCOPUS Times Cited 20]


[19] D. G. Cacuci. Sensitivity & Uncertainly Analysis. Chapman & Hall/CRC, 2003.

[20] S. Aghaei, P. Andrei, and M. Hagmann, "Towards atomistic dopant profiling using SCM measurements," Proc. of the 2015 International Conference on Semiconductor Processes and Devices, Washington D.C., 2015, pp. 401-404,
[CrossRef] [SCOPUS Times Cited 1]




References Weight

Web of Science® Citations for all references: 522 TCR
SCOPUS® Citations for all references: 630 TCR

Web of Science® Average Citations per reference: 25 ACR
SCOPUS® Average Citations per reference: 30 ACR

TCR = Total Citations for References / ACR = Average Citations per Reference

We introduced in 2010 - for the first time in scientific publishing, the term "References Weight", as a quantitative indication of the quality ... Read more

Citations for references updated on 2016-12-06 10:06 in 97 seconds.




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Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania


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