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Stefan cel Mare
University of Suceava
Faculty of Electrical Engineering and
Computer Science
13, Universitatii Street
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ROMANIA

Print ISSN: 1582-7445
Online ISSN: 1844-7600
WorldCat: 643243560
doi: 10.4316/AECE


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  3/2015 - 8

A Buck-Boost Converter Modified to Utilize 600V GaN Power Devices in a PV Application Requiring 1200V Devices

SRDIC, S. See more information about SRDIC, S. on SCOPUS See more information about SRDIC, S. on IEEExplore See more information about SRDIC, S. on Web of Science, DESPOTOVIC, Z. See more information about DESPOTOVIC, Z. on SCOPUS See more information about DESPOTOVIC, Z. on SCOPUS See more information about DESPOTOVIC, Z. on Web of Science
 
Click to see author's profile in See more information about the author on SCOPUS SCOPUS, See more information about the author on IEEE Xplore IEEE Xplore, See more information about the author on Web of Science Web of Science

Download PDF pdficon (2,097 KB) | Citation | Downloads: 621 | Views: 53

Author keywords
buck-boost converter, converter topology, dc-dc power converters, GaN semiconductor devices, PV inverter

References keywords
power(24), electronics(21), photovoltaic(9), transformer(8), apec(8), phase(7), grid(7), systems(6), single(6), ipec(6)
Blue keywords are present in both the references section and the paper title.

About this article
Date of Publication: 2015-08-31
Volume 15, Issue 3, Year 2015, On page(s): 59 - 64
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2015.03008
Web of Science Accession Number: 000360171500008
SCOPUS ID: 84940729817

Abstract
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This paper presents a buck-boost converter which is modified to utilize new 600 V gallium nitride (GaN) power semiconductor devices in an application requiring 1200 V devices. The presented buck-boost converter is used as a part of a dc/dc stage in an all-GaN photovoltaic (PV) inverter and it provides a negative voltage for the 3-level neutral-point-clamped (NPC) PWM inverter which is connected to the utility grid. Since in this application the transistor and the diode of the buck-boost converter need to block the sum of the PV string voltage (which is normally in the range from 150 to 350 V) and the dc bus voltage (which is in the order of 400 V), the 1200 V devices or series connection of 600 V devices need to be employed. Currently, 1200 V GaN power semiconductor devices are not commercially available. Therefore, the standard buck-boost converter is modified to enable the use of 600 V GaN devices in this particular application. Based on the proposed converter topology, a PSpice simulation model and a 600 W converter prototype were developed. Both simulation and experimental results show successful operation of the converter.


References | Cited By  «-- Click to see who has cited this paper

[1] M. Ishida, Y. Uemoto, T. Ueda, T. Tanaka, D. Ueda, "GaN power switching devices," 2010 International Power Electronics Conference (IPEC), pp. 1014-1017, 21-24 June 2010.
[CrossRef] [SCOPUS Times Cited 61]


[2] J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, J. Rebollo, "A Survey of Wide Bandgap Power Semiconductor Devices," IEEE Transactions on Power Electronics, vol. 29, no. 5, pp. 2155-2163, May 2014.
[CrossRef] [Web of Science Times Cited 740] [SCOPUS Times Cited 869]


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[CrossRef] [SCOPUS Times Cited 30]


[4] T. Morita, S. Tamura, Y. Anda, M. Ishida, Y. Uemoto, T. Ueda, T. Tanaka, D. Ueda, "99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors," 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) , pp. 481-484, 6-11 Mar. 2011.
[CrossRef] [SCOPUS Times Cited 132]


[5] Weimin Zhang, Zhuxian Xu, Zheyu Zhang, F. Wang, L. M. Tolbert, B. J. Blalock, "Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter," 2013 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 3571-3578, 15-19 Sep. 2013.
[CrossRef] [SCOPUS Times Cited 70]


[6] A. Tuysuz, R. Bosshard, J. W. Kolar, "Performance comparison of a GaN GIT and a Si IGBT for high-speed drive applications," 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), pp.1904-1911, 18-21 May 2014.
[CrossRef] [SCOPUS Times Cited 47]


[7] B. Hughes, J. Lazar, S. Hulsey, M. Musni, D. Zehnder, A. Garrido, R. Khanna, R. Chu, S. Khalil, K. Boutros, "Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot," 2014 Twenty-Ninth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 484-487, 16-20 Mar. 2014.
[CrossRef] [SCOPUS Times Cited 22]


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[CrossRef] [SCOPUS Times Cited 32]


[10] M. Acanski, J. Popovic-Gerber, J. A. Ferreira, "Comparison of Si and GaN power devices used in PV module integrated converters," 2011 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 1217-1223, 17-22 Sep. 2011.
[CrossRef] [SCOPUS Times Cited 36]


[11] A. Hensel, C. Wilhelm, D. Kranzer, "Application of a new 600 V GaN transistor in power electronics for PV systems," 2012 15th International Power Electronics and Motion Control Conference (EPE/PEMC), pp. DS3d.4-1-DS3d.4-5, 4-6 Sep. 2012.
[CrossRef] [SCOPUS Times Cited 31]


[12] L. Garcia-Rodriguez, V. Jones, J. C. Balda, E. Lindstrom, A. Oliva, J. Gonzalez-Llorente, "Design of a GaN-based microinverter for photovoltaic systems," 2014 IEEE 5th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), pp.1-6, 24-27 June 2014.
[CrossRef] [SCOPUS Times Cited 11]


[13] S. B. Kjaer, J. K. Pedersen, F. Blaabjerg, "A review of single-phase grid-connected inverters for photovoltaic modules," IEEE Transactions on Industry Applications, vol. 41, no. 5, pp. 1292-1306, Sep.-Oct. 2005.
[CrossRef] [Web of Science Times Cited 2048] [SCOPUS Times Cited 2640]


[14] S. Jain, V. Agarwal, "A single-stage grid connected inverter topology for solar PV systems with maximum power point tracking," IEEE Transactions on Power Electronics, vol. 22, no. 5, pp. 1928-1940, Sep. 2007.
[CrossRef] [Web of Science Times Cited 354] [SCOPUS Times Cited 475]


[15] R. Gonzalez, J. Lopez, P. Sanchis, L. Marroyo, "Transformerless inverter for single-phase photovoltaic systems," IEEE Transactions on Power Electronics, vol. 22, no. 2, pp. 693-697, Mar. 2007.
[CrossRef] [Web of Science Times Cited 400] [SCOPUS Times Cited 538]


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[18] T. Kerekes, M. Liserre, R. Teodorescu, C. Klumpner, M. Sumner, "Evaluation of three-phase transformerless photovoltaic inverter topologies," IEEE Transactions on Power Electronics, vol. 24, no. 9, pp. 2202-2211, Sep. 2009.
[CrossRef] [Web of Science Times Cited 261] [SCOPUS Times Cited 334]


[19] S. V. Araujo, P. Zacharias, R. Mallwitz, "Highly efficient single-phase transformerless inverters for grid-connected photovoltaic systems," IEEE Transactions on Industrial Electronics, vol. 57, no. 9, pp. 3118-3128, Sep. 2010.
[CrossRef] [Web of Science Times Cited 356] [SCOPUS Times Cited 480]


[20] Wensong Yu, Jih-Sheng Lai, Hao Qian, C. Hutchens, "High-efficiency MOSFET inverter with H6-type configuration for photovoltaic nonisolated AC-module applications," IEEE Transactions on Power Electronics, vol. 26, no. 4, pp. 1253-1260, Apr. 2011.
[CrossRef] [Web of Science Times Cited 200] [SCOPUS Times Cited 236]


[21] T. Kerekes, R. Teodorescu, P. Rodriguez, G. Vazquez, E. Aldabas, "A new high-efficiency single-phase transformerless PV inverter topology," IEEE Transactions on Industrial Electronics, vol. 58, no. 1, pp. 184-191, Jan. 2011.
[CrossRef] [Web of Science Times Cited 428] [SCOPUS Times Cited 552]


[22] Li Zhang, Kai Sun, Lanlan Feng, Hongfei Wu, Yan Xing, "A family of neutral point clamped full-bridge topologies for transformerless photovoltaic grid-tied inverters," IEEE Transactions on Power Electronics, vol. 28, no. 2, pp. 730-739, Feb. 2013.
[CrossRef] [Web of Science Times Cited 177] [SCOPUS Times Cited 218]


[23] T. K. S. Freddy, N. A. Rahim, Wooi-Ping Hew, Hang Seng Che, "Comparison and analysis of single-phase transformerless grid-connected PV inverters," IEEE Transactions on Power Electronics, vol. 29, no. 10, pp. 5358-5369, Oct. 2014.
[CrossRef] [Web of Science Times Cited 156] [SCOPUS Times Cited 183]


[24] D. Reusch, J. Strydom, "Understanding the effect of PCB layout on circuit performance in a high frequency gallium nitride based point of load converter," Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 649-655, 17-21 Mar. 2013.
[CrossRef] [Web of Science Times Cited 157] [SCOPUS Times Cited 184]




References Weight

Web of Science® Citations for all references: 5,445 TCR
SCOPUS® Citations for all references: 7,444 TCR

Web of Science® Average Citations per reference: 218 ACR
SCOPUS® Average Citations per reference: 298 ACR

TCR = Total Citations for References / ACR = Average Citations per Reference

We introduced in 2010 - for the first time in scientific publishing, the term "References Weight", as a quantitative indication of the quality ... Read more

Citations for references updated on 2020-11-22 14:29 in 146 seconds.




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