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Stefan cel Mare
University of Suceava
Faculty of Electrical Engineering and
Computer Science
13, Universitatii Street
Suceava - 720229
ROMANIA

Print ISSN: 1582-7445
Online ISSN: 1844-7600
WorldCat: 643243560
doi: 10.4316/AECE


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  4/2014 - 13

A Simplified Analytical Technique for High Frequency Characterization of Resonant Tunneling Diode

DESSOUKI, A. A. S. See more information about DESSOUKI, A. A. S. on SCOPUS See more information about DESSOUKI, A. A. S. on IEEExplore See more information about DESSOUKI, A. A. S. on Web of Science, ABDALLAH, R. M. See more information about  ABDALLAH, R. M. on SCOPUS See more information about  ABDALLAH, R. M. on SCOPUS See more information about ABDALLAH, R. M. on Web of Science, ALY, M. H. See more information about ALY, M. H. on SCOPUS See more information about ALY, M. H. on SCOPUS See more information about ALY, M. H. on Web of Science
 
Click to see author's profile in See more information about the author on SCOPUS SCOPUS, See more information about the author on IEEE Xplore IEEE Xplore, See more information about the author on Web of Science Web of Science

Download PDF pdficon (867 KB) | Citation | Downloads: 324 | Views: 2,288

Author keywords
Matlab, negative differential conductance (NDC), resonant tunneling diode (RTD), small signal model, SPICE

References keywords
tunneling(20), resonant(20), diodes(9), physics(6), model(6), diode(6), circuit(6), brown(6), signal(5), devices(5)
Blue keywords are present in both the references section and the paper title.

About this article
Date of Publication: 2014-11-30
Volume 14, Issue 4, Year 2014, On page(s): 87 - 94
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2014.04013
Web of Science Accession Number: 000348772500013
SCOPUS ID: 84921689311

Abstract
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Full text preview
his paper proposes a simplified analytical technique for high frequency characterization of the resonant tunneling diode (RTD). An equivalent circuit of the RTD that consists of a parallel combination of conductance, G (V, f), and capacitance, C (V, f) is formulated. The proposed approach uses the measured DC current versus voltage characteristic of the RTD to extract the equivalent circuit elements parameters in the entire bias range. Using the proposed analytical technique, the frequency response - including the high frequency range - of many characteristic aspects of the RTD is investigated. Also, the maximum oscillation frequency of the RTD is calculated. The results obtained have been compared with those concluded and reported in the literature. The reported results in literature were obtained through simulation of the RTD at high frequency using either a computationally complicated quantum simulator or through difficult RF measurements. A similar pattern of results and highly concordant conclusion are obtained. The proposed analytical technique is simple, correct, and appropriate to investigate the behavior of the RTD at high frequency. In addition, the proposed technique can be easily incorporated into SPICE program to simulate circuits containing RTD.


References | Cited By  «-- Click to see who has cited this paper

[1] J. P. Sun, G. I. Haddad, P. Mazumder, and J. N. Schulman, "Resonant tunneling diodes: models and properties," Proceedings of the IEEE, Vol.86, Issue 4 pp. 641-660, April 1998.
[CrossRef]


[2] P. Mazumder, S. Kulkarni, M. Bhattacharya, J. P. Sun, and G. I. Haddad, "Digital circuit applications of resonant tunneling devices," Proceedings of the IEEE, Vol. 86, Issue 4 , pp.664-686, April 1998.
[CrossRef] [Web of Science Times Cited 301]


[3] L. L. Chang, L. Esaki, and R. Tsu, "Resonant tunneling in semiconductor double barriers," Appl. Phys. Lett., vol. 24, no. 12, pp. 593-595, 15 June 1974.
[CrossRef]


[4] H. Mizuta and T. Tanoue, The physics and applications of resonant tunneling diodes, Chapter5, Cambridge University Press, Cambridge 1995. ISBN: 9780521432184.

[5] E. R. Brown, T. C. L. G. Sollner, C. D. Parker, W. D. Goodhue, and C. L. Chen, "Oscillations up to 420 ghz in gaas/alas resonant tunneling diodes," Applied Physics Letters, vol. 55, p. 1777, 1989.
[CrossRef] [Web of Science Times Cited 239]


[6] J. Figueiredo, B. Romeira, T. Slight and C. Ironside, Resonant Tunnelling Optoelectronic Circuits: Advances in Optical and Photonic Devices, chapter 10, January 2010, INTECH, Croatia.
[CrossRef]


[7] D. R. Chowdhury (2008), Experimental study and modelling of AC characteristics of Resonant Tunneling Diodes, PhD-Thesis, Chapter1, Section 1.2, Technical University of Darmstadt, Germany, 2008.

[8] J. M. Gering, D. A. Crim, D. G. Morgan, P. D. Coleman, W. Kopp, and H. Morkoc, "A small-signal equivalent-circuit model for GaAs-AlxGa1!xAs resonant tunneling heterostructures at microwave frequencies," Journal of Applied Physics, vol. 61, pp. 271-276, Jan 1987.
[CrossRef] [Web of Science Times Cited 81]


[9] R. Lake and J. Yang, "A physics based model for the RTD quantum capacitance," IEEE Transactions on Electron Devices, vol. 50, pp. 785-789, Mar. 2003.
[CrossRef] [Web of Science Times Cited 31]


[10] E. R. Brown, C. D. Parker, and T. C. L. G. Sollner, "Effect of quasibound-state lifetime on the oscillation power of resonant tunneling diodes," Applied Physics Letters, vol. 54, pp. 934-936, Mar. 1989.
[CrossRef] [Web of Science Times Cited 108]


[11] Q. Liu, A. Seabaugh, P. Chahal, and F. Morris, "Unified ac model for the resonant tunneling diode," IEEE Transactions on Electron Devices, vol. 51, pp. 653-657, May 2004.
[CrossRef] [Web of Science Times Cited 34]


[12] M. Long, H. Ying-Long, Z. Yang, W. Liang-Chen, Y. Fu-Hua, and Z. Yi-Ping "Small Signal Equivalent Circuit Model for Resonant Tunneling Diodes," Chin. Phys. Lett., Vol. 23, No. 8, July 2006.
[CrossRef]


[13] W. R. Liou and P. Roblin, "High frequency Simulation of a Resonant Tunneling Diodes, " IEEE Transaction on Electron Device, Vol. 41, No. 7, July 1994.
[CrossRef] [Web of Science Times Cited 33]


[14] W. R. Liou, J. C. Lin and M. L. Yeh,, " Simulation and Analysis of a Resonant Tunneling Diode Oscillator", Solid-State Electronics Vol. 39, No. 6, pp. 833-839, 1996.
[CrossRef] [Web of Science Times Cited 6]


[15] P. Zho, H. L. Cui, D. L. Woolard, K. L. Jensen, and F. A. Buot, "Equivalent Circuit Parameters of Resonant Tunneling Diodes Extracted from Self-Consistent Wigner-Poisson Simulation," IEEE Transaction on Electron Device, Vol. 48, No. 4, April 2001.
[CrossRef] [Web of Science Times Cited 14]


[16] K. Huang, M. Carroll, G. Starneset, R. Lake, D. Janes, K. Webb, et.al., "Numerically generated resonant tunneling diode equivalent circuit parameters,", J. Appl. Phys. Vol.76, pp. 3850, March 1994.
[CrossRef] [Web of Science Times Cited 7]


[17] S .F. Nafea, A. A.S.Dessouki, "An accurate large-signal SPICE model for Resonant Tunneling Diode," International Conference on Microelectronics (ICM), Cairo, 19-22 Dec., pp.507-510, 2010.
[CrossRef] [Web of Science Times Cited 7]


[18] Mattia, J.P, Brown, E.R., Calawa, A.R. and Manfra, M.J., "Small signal admittance and switching measurements of the resonant tunneling diode," Applied Physics Letters, Vol.63, Issue: 4, Jul 1993.
[CrossRef] [Web of Science Times Cited 3]


[19] Rania M. Abdallah, Ahmed A. S. Dessouki and Moustafa H. Aly, "A Simple Approach to Extract the Small Signal Model Circuit Elements for RTD", Proceeding of International Conference on Information Science, Electronics and Electrical Engineering (ISEEE2014), Vol. 3, 0372-10695.pdf, Sapporo City, Hokkaido, Japan, April, 26-28. 2014.
[CrossRef]


[20] E. R. Brown, W. D. Goodhue, and T. C. L. G. Sollner, "Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary- state tunneling theory," J. Appl. Phys., Vol. 64, No.3, pp 1519-1529, August 1988.
[CrossRef] [Web of Science Times Cited 119]


[21] T. E. L. G. Sollner, E. R. Brown, and H. Q. Le, "Microwave and Millimeter-Wave Resonant-Tunneling Devices," The Lincoln Laboratory Journal, Vol. I, No. 1, pp 89-106, 1988.

[22] Qingmin Liu, (2006), Tunnel Diode/Transistor Integrated Circuits, PhD-Thesis, Chapter 2, University of Notre Dame, India, 2008.

[23] E. R. Brown, "Submillimeter-Wave Resonant-Tunneling Oscillators," First International Symposium on Space Terahertz Technology, pp 74-83, March 5-6, 1990.



References Weight

Web of Science® Citations for all references: 983 TCR
SCOPUS® Citations for all references: 0

Web of Science® Average Citations per reference: 41 ACR
SCOPUS® Average Citations per reference: 0

TCR = Total Citations for References / ACR = Average Citations per Reference

We introduced in 2010 - for the first time in scientific publishing, the term "References Weight", as a quantitative indication of the quality ... Read more

Citations for references updated on 2019-10-22 06:58 in 128 seconds.




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Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania


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