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A Simplified Analytical Technique for High Frequency Characterization of Resonant Tunneling DiodeDESSOUKI, A. A. S. , ABDALLAH, R. M. , ALY, M. H.
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Matlab, negative differential conductance (NDC), resonant tunneling diode (RTD), small signal model, SPICE
tunneling(20), resonant(20), diodes(9), physics(6), model(6), diode(6), circuit(6), brown(6), signal(5), devices(5)
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About this article
Date of Publication: 2014-11-30
Volume 14, Issue 4, Year 2014, On page(s): 87 - 94
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2014.04013
Web of Science Accession Number: 000348772500013
SCOPUS ID: 84921689311
his paper proposes a simplified analytical technique for high frequency characterization of the resonant tunneling diode (RTD). An equivalent circuit of the RTD that consists of a parallel combination of conductance, G (V, f), and capacitance, C (V, f) is formulated. The proposed approach uses the measured DC current versus voltage characteristic of the RTD to extract the equivalent circuit elements parameters in the entire bias range. Using the proposed analytical technique, the frequency response - including the high frequency range - of many characteristic aspects of the RTD is investigated. Also, the maximum oscillation frequency of the RTD is calculated. The results obtained have been compared with those concluded and reported in the literature. The reported results in literature were obtained through simulation of the RTD at high frequency using either a computationally complicated quantum simulator or through difficult RF measurements. A similar pattern of results and highly concordant conclusion are obtained. The proposed analytical technique is simple, correct, and appropriate to investigate the behavior of the RTD at high frequency. In addition, the proposed technique can be easily incorporated into SPICE program to simulate circuits containing RTD.
|References|||||Cited By «-- Click to see who has cited this paper|
| J. P. Sun, G. I. Haddad, P. Mazumder, and J. N. Schulman, "Resonant tunneling diodes: models and properties," Proceedings of the IEEE, Vol.86, Issue 4 pp. 641-660, April 1998. |
[CrossRef] [Web of Science Times Cited 203] [SCOPUS Times Cited 233]
 P. Mazumder, S. Kulkarni, M. Bhattacharya, J. P. Sun, and G. I. Haddad, "Digital circuit applications of resonant tunneling devices," Proceedings of the IEEE, Vol. 86, Issue 4 , pp.664-686, April 1998.
[CrossRef] [Web of Science Times Cited 318] [SCOPUS Times Cited 373]
 L. L. Chang, L. Esaki, and R. Tsu, "Resonant tunneling in semiconductor double barriers," Appl. Phys. Lett., vol. 24, no. 12, pp. 593-595, 15 June 1974.
[CrossRef] [SCOPUS Times Cited 1518]
 H. Mizuta and T. Tanoue, The physics and applications of resonant tunneling diodes, Chapter5, Cambridge University Press, Cambridge 1995. ISBN: 9780521432184.
 E. R. Brown, T. C. L. G. Sollner, C. D. Parker, W. D. Goodhue, and C. L. Chen, "Oscillations up to 420 ghz in gaas/alas resonant tunneling diodes," Applied Physics Letters, vol. 55, p. 1777, 1989.
[CrossRef] [Web of Science Times Cited 240] [SCOPUS Times Cited 257]
 J. Figueiredo, B. Romeira, T. Slight and C. Ironside, Resonant Tunnelling Optoelectronic Circuits: Advances in Optical and Photonic Devices, chapter 10, January 2010, INTECH, Croatia.
 D. R. Chowdhury (2008), Experimental study and modelling of AC characteristics of Resonant Tunneling Diodes, PhD-Thesis, Chapter1, Section 1.2, Technical University of Darmstadt, Germany, 2008.
 J. M. Gering, D. A. Crim, D. G. Morgan, P. D. Coleman, W. Kopp, and H. Morkoc, "A small-signal equivalent-circuit model for GaAs-AlxGa1!xAs resonant tunneling heterostructures at microwave frequencies," Journal of Applied Physics, vol. 61, pp. 271-276, Jan 1987.
[CrossRef] [Web of Science Times Cited 81] [SCOPUS Times Cited 86]
 R. Lake and J. Yang, "A physics based model for the RTD quantum capacitance," IEEE Transactions on Electron Devices, vol. 50, pp. 785-789, Mar. 2003.
[CrossRef] [Web of Science Times Cited 34] [SCOPUS Times Cited 46]
 E. R. Brown, C. D. Parker, and T. C. L. G. Sollner, "Effect of quasibound-state lifetime on the oscillation power of resonant tunneling diodes," Applied Physics Letters, vol. 54, pp. 934-936, Mar. 1989.
[CrossRef] [Web of Science Times Cited 110] [SCOPUS Times Cited 106]
 Q. Liu, A. Seabaugh, P. Chahal, and F. Morris, "Unified ac model for the resonant tunneling diode," IEEE Transactions on Electron Devices, vol. 51, pp. 653-657, May 2004.
[CrossRef] [Web of Science Times Cited 38] [SCOPUS Times Cited 47]
 M. Long, H. Ying-Long, Z. Yang, W. Liang-Chen, Y. Fu-Hua, and Z. Yi-Ping "Small Signal Equivalent Circuit Model for Resonant Tunneling Diodes," Chin. Phys. Lett., Vol. 23, No. 8, July 2006.
[CrossRef] [SCOPUS Times Cited 4]
 W. R. Liou and P. Roblin, "High frequency Simulation of a Resonant Tunneling Diodes, " IEEE Transaction on Electron Device, Vol. 41, No. 7, July 1994.
[CrossRef] [Web of Science Times Cited 35] [SCOPUS Times Cited 38]
 W. R. Liou, J. C. Lin and M. L. Yeh,, " Simulation and Analysis of a Resonant Tunneling Diode Oscillator", Solid-State Electronics Vol. 39, No. 6, pp. 833-839, 1996.
[CrossRef] [Web of Science Times Cited 6] [SCOPUS Times Cited 5]
 P. Zho, H. L. Cui, D. L. Woolard, K. L. Jensen, and F. A. Buot, "Equivalent Circuit Parameters of Resonant Tunneling Diodes Extracted from Self-Consistent Wigner-Poisson Simulation," IEEE Transaction on Electron Device, Vol. 48, No. 4, April 2001.
[CrossRef] [Web of Science Times Cited 14] [SCOPUS Times Cited 24]
 K. Huang, M. Carroll, G. Starneset, R. Lake, D. Janes, K. Webb, et.al., "Numerically generated resonant tunneling diode equivalent circuit parameters,", J. Appl. Phys. Vol.76, pp. 3850, March 1994.
[CrossRef] [Web of Science Times Cited 7] [SCOPUS Times Cited 6]
 S .F. Nafea, A. A.S.Dessouki, "An accurate large-signal SPICE model for Resonant Tunneling Diode," International Conference on Microelectronics (ICM), Cairo, 19-22 Dec., pp.507-510, 2010.
[CrossRef] [Web of Science Times Cited 8] [SCOPUS Times Cited 9]
 Mattia, J.P, Brown, E.R., Calawa, A.R. and Manfra, M.J., "Small signal admittance and switching measurements of the resonant tunneling diode," Applied Physics Letters, Vol.63, Issue: 4, Jul 1993.
[CrossRef] [Web of Science Times Cited 3] [SCOPUS Times Cited 5]
 Rania M. Abdallah, Ahmed A. S. Dessouki and Moustafa H. Aly, "A Simple Approach to Extract the Small Signal Model Circuit Elements for RTD", Proceeding of International Conference on Information Science, Electronics and Electrical Engineering (ISEEE2014), Vol. 3, 0372-10695.pdf, Sapporo City, Hokkaido, Japan, April, 26-28. 2014.
[CrossRef] [SCOPUS Times Cited 4]
 E. R. Brown, W. D. Goodhue, and T. C. L. G. Sollner, "Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary- state tunneling theory," J. Appl. Phys., Vol. 64, No.3, pp 1519-1529, August 1988.
[CrossRef] [Web of Science Times Cited 121] [SCOPUS Times Cited 126]
 T. E. L. G. Sollner, E. R. Brown, and H. Q. Le, "Microwave and Millimeter-Wave Resonant-Tunneling Devices," The Lincoln Laboratory Journal, Vol. I, No. 1, pp 89-106, 1988.
 Qingmin Liu, (2006), Tunnel Diode/Transistor Integrated Circuits, PhD-Thesis, Chapter 2, University of Notre Dame, India, 2008.
 E. R. Brown, "Submillimeter-Wave Resonant-Tunneling Oscillators," First International Symposium on Space Terahertz Technology, pp 74-83, March 5-6, 1990.
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