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JCR Impact Factor: 0.459
JCR 5-Year IF: 0.442
Issues per year: 4
Current issue: Nov 2016
Next issue: Feb 2017
Avg review time: 96 days


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Stefan cel Mare
University of Suceava
Faculty of Electrical Engineering and
Computer Science
13, Universitatii Street
Suceava - 720229
ROMANIA

Print ISSN: 1582-7445
Online ISSN: 1844-7600
WorldCat: 644266260
doi: 10.4316/AECE


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2016-Jun-14
Thomson Reuters published the Journal Citations Report for 2015. The JCR Impact Factor of Advances in Electrical and Computer Engineering is 0.459, and the JCR 5-Year Impact Factor is 0.442.

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2015-Feb-09
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  1/2013 - 9

Analysis of Magnetization Switching via Vortex Formation in Soft Magnetic Nanoparticles

DIMIAN, M. See more information about DIMIAN, M. on SCOPUS See more information about DIMIAN, M. on IEEExplore See more information about DIMIAN, M. on Web of Science, LEFTER, C. See more information about LEFTER, C. on SCOPUS See more information about LEFTER, C. on SCOPUS See more information about LEFTER, C. on Web of Science
 
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Download PDF pdficon (895 KB) | Citation | Downloads: 316 | Views: 389

Author keywords
data storage, hysteresis, micromagnetic, MRAM, Permalloy

References keywords
magnetic(9), technology(4), storage(4), mram(4), materials(4), data(4)
Blue keywords are present in both the references section and the paper title.

About this article
Date of Publication: 2013-02-28
Volume 13, Issue 1, Year 2013, On page(s): 53 - 58
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2013.01009
Web of Science Accession Number: 000315768300009
SCOPUS ID: 84875318191

Abstract
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This paper illustrates quasi-static magnetization switching via vortex formation in soft magnetic nanoparticles of various shapes and sizes. The research is motivated by the rapid development of novel alternatives to the current paradigm of magnetic recording, which approaches its fundamental limits. The study is performed by using NMAG simulation environment which is a finite-element micro-magnetic simulation package based on Python scripts running on a Linux virtual machine. Various shapes and sizes are considered in this analysis of hysteresis phenomena and vortex formations in nanoparticles subject to different orientations of the magnetic field.


References | Cited By  «-- Click to see who has cited this paper

[1] T. Thomson, L. Abelmann, and H. Groenland, "Magnetic data storage: Past Present and Future", Springer, vol. Magnetic Nanostructures in Modern Technology, pp. 237-306, 2008.

[2] Y. Song and D. Zhu, "High density data storage: Principle, Technology, and Materials", World Scientific Publishing, 2009.
[CrossRef]


[3] S. N. Piramanayagam, C. T. Chong, "Developments in data storage: Materials perspective", John Wiley and Sons, 2011.
[CrossRef] [SCOPUS Times Cited 25]


[4] K. Matsumoto, A. Inomata, and Shin-ya Hasegawa, "Thermally Assisted Magnetic Recording", Fujitsu Scientific & Technical Journal, vol. 42, pp. 158-167, January 2006.

[5] J. M. Slaughter, R. W. Dave, and M. DeHerrera, "Fundamentals of MRAM Technology", Journal of Superconductivity: Incorporating Novel Magnetism, vol. 15, 2002.
[CrossRef] [Web of Science Times Cited 39]


[6] B. Heinrich and J.A.C. Bland, "Ultrathin Magnetic Structures: Applications of Nanomagnetism", vol. IV: Springer, 2005.
[CrossRef]


[7] D. D. Tang and Y.-J. Lee, "Magnetic Memory Fundamentals and Technology", New York: Cambridge University Press, 2010.
[CrossRef] [SCOPUS Times Cited 1]


[8] W. Raberg, A. Gupta, "Material Requirements for Magnetic Random Access Memory (MRAM) Devices", Thin Films and Heterostructures for Oxide Electronics Multifunctional Thin Film Series, 2005, Part 2, 129-151.
[CrossRef]


[9] R. Desikan, C. R. Lefurgy, S. W. Keckler, and D. Burger, "On-chip MRAM as a High-Bandwidth", Low-Latency Replacement for DRAM Physical Memories, vol. Tech Report TR-02-47, ed. The University of Texas at Austin: Department of Computer Sciences, 2002.

[10] Hosseini, S., Moghani, J. S., Jensen, B. B., "Accurate Modeling of a Transverse Flux Permanent Magnet Generator Using 3D Finite Element Analysis," Advances in Electrical and Computer Engineering, vol. 11, no. 3, pp. 115-120, 2011.
[CrossRef] [Full Text] [Web of Science Times Cited 7] [SCOPUS Times Cited 7]


[11] Ida, N., Di Rienzo, L., Yuferev, S., "Computer-Aided Design in Electromagnetics - the Case for Surface Impedance Boundary Conditions," Advances in Electrical and Computer Engineering, vol. 12, no. 3, pp. 3-12, 2012,
[CrossRef] [Full Text] [Web of Science Times Cited 3] [SCOPUS Times Cited 3]


[12] H. Kronmuller, S. Parkin, "Handbook of Magnetism and Advanced Magnetic Materials", Wiley September, 2007.

[13] R. Antos, YoshiChika Otani, J. Shibata, "Magnetic Vortex Dynamics", Journal of the Physical Society of Japan, Vol. 77, No. 3, March, 2008.
[CrossRef] [Web of Science Times Cited 44] [SCOPUS Times Cited 39]


[14] T. Fischbacher, M. Franchin, G. Bordignon, and H. Fangohr, "A Systematic Approach to Multiphysics Extensions of Finite-Element-Based Micromagnetic Simulations: Nmag", IEEE Transactions on Magnetics, vol. 43, no. 6, pp. 2896-2898 2007.
[CrossRef] [Web of Science Times Cited 127] [SCOPUS Times Cited 142]


[15] [Online] Available: Temporary on-line reference link removed - see the PDF document

[16] [Online] Available: Temporary on-line reference link removed - see the PDF document

[17] [Online] Available: Temporary on-line reference link removed - see the PDF document

[18] J. M. D. Coey, "Magnetism and Magnetic Materials", Cambridge University Press, 2010.
[CrossRef] [SCOPUS Times Cited 25]


[19] R. Katti, "MRAM Read Bit with Askew Fixed Layer", United States Patent, no. US7548452B2, June 16, 2009.

[20] Dimian, M., Gindulescu, A., Acholo, C., "Minimum Field Requirements for Spin-Polarized Current Assisted Switching of Magnetization in Nanostructures with Uniaxial Anisotropy," Advances in Electrical and Computer Engineering, vol. 9, no. 1, pp. 3-7, 2009,
[CrossRef] [Full Text] [Web of Science Times Cited 2]


[21] C. Lefter, M. Dimian, "Micromagnetic analysis of magnetization behavior in Permallow nanoparticles for data storage applications," Proceedings of 11th International Conference on Development and Applications Systems, pp. 122-127, 2012.



References Weight

Web of Science® Citations for all references: 222 TCR
SCOPUS® Citations for all references: 242 TCR

Web of Science® Average Citations per reference: 10 ACR
SCOPUS® Average Citations per reference: 11 ACR

TCR = Total Citations for References / ACR = Average Citations per Reference

We introduced in 2010 - for the first time in scientific publishing, the term "References Weight", as a quantitative indication of the quality ... Read more

Citations for references updated on 2016-12-05 02:49 in 67 seconds.




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Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania


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