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Stefan cel Mare
University of Suceava
Faculty of Electrical Engineering and
Computer Science
13, Universitatii Street
Suceava - 720229
ROMANIA

Print ISSN: 1582-7445
Online ISSN: 1844-7600
WorldCat: 643243560
doi: 10.4316/AECE


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  1/2017 - 10

 HIGHLY CITED PAPER 

Design Options for Thermal Shutdown Circuitry with Hysteresis Width Independent on the Activation Temperature

PLESA, C.-S. See more information about PLESA, C.-S. on SCOPUS See more information about PLESA, C.-S. on IEEExplore See more information about PLESA, C.-S. on Web of Science, NEAG, M. See more information about  NEAG, M. on SCOPUS See more information about  NEAG, M. on SCOPUS See more information about NEAG, M. on Web of Science, RADOIAS, L. See more information about RADOIAS, L. on SCOPUS See more information about RADOIAS, L. on SCOPUS See more information about RADOIAS, L. on Web of Science
 
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Download PDF pdficon (1,369 KB) | Citation | Downloads: 2,275 | Views: 3,441

Author keywords
bipolar integrated circuits, hysteresis, integrated circuit reliability, power system protection, thermal analysis

References keywords
thermal(7), circuit(6), protection(5), voltage(4), test(4), power(4), current(4)
Blue keywords are present in both the references section and the paper title.

About this article
Date of Publication: 2017-02-28
Volume 17, Issue 1, Year 2017, On page(s): 69 - 74
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2017.01010
Web of Science Accession Number: 000396335900010
SCOPUS ID: 85014193533

Abstract
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Full text preview
This paper presents several design options for implementing a thermal shutdown circuit with hysteretic characteristic, which has two special features: a programmable activation temperature (the upper trip point of the characteristic) and a hysteresis width largely insensitive to the actual value of the activation temperature and to variations of the supply voltage. A fairly straightforward architecture is employed, with the hysteresis implemented by a current source enabled by the output of the circuit. Four possible designs are considered for this current source: VBE/R, modified-VBE/R, Widlar and a peaking current source tailored for this circuit. First, a detailed analytical analysis of the circuit implemented with these current sources is performed; it indicates the one best suited for this application and provides key sizing equations. Next, the chosen current source is employed to design the thermal shutdown protection of an integrated Low-Dropout Voltage Regulator (LDO) for automotive applications. Simulation results and measurements performed on the silicon implementation fully validate the design. Moreover, they compare favorably with the performance of similar circuits reported recently.


References | Cited By  «-- Click to see who has cited this paper

[1] Thermal Considerations for Linear Regulators, Application Note ANP2, Sipex Co., Milpitas, 2006, pp. 1-8

[2] G. A. Rincon-Mora, "Analog IC Design with Low-Dropout Voltage Regulators", pp. 347-373, McGraw-Hill Professional, 2009

[3] Y. C. Hung, D. J. Ceng, "A Sub-1V CMOS LDO regulator with multiple protection capabilities", Computer, Consumer and Control (IS3C), 2014, pp. 800-803,
[CrossRef] [Web of Science Times Cited 4] [SCOPUS Times Cited 7]


[4] A.-G. Bajenaru, C. Boianceanu, G. Brezeanu, „Investigation of electro-thermal behaviour of a linear voltage regulator and its protection circuits by simulator coupling", International Semiconductor Conf., 2013, pp. 237-240,
[CrossRef] [SCOPUS Times Cited 8]


[5] J. Altet, R. Antonio, "Thermal testing of integrated circuits", pp. 53-96, Kluwer Academic Publisher, 2002

[6] Plesca A, Scintee A, "Thermal aspects related to power assemblies", Advances in Electrical and Computer Engineering, vol. 10, 2010, pp. 23-27,
[CrossRef] [Full Text] [Web of Science Times Cited 6] [SCOPUS Times Cited 6]


[7] Zhang B, Feng Q.Y. "A novel thermal-shutdown protection circuit", 3rd International Conference on Anti-Counterfeiting, Security and Identification in Communication (ASID), 2009, pp. 535-538,
[CrossRef] [Web of Science Times Cited 7]


[8] Nagel, M.H., Fonderie, "Integrated 1V thermal shutdown circuit", Electronics Letters, 1992, vol. 28, pp 969-970,
[CrossRef] [SCOPUS Times Cited 8]


[9] Tan C., Liu Z., "A bandgap reference and over temperature protection circuit designed for TCXO chip", International Conference on Intelligent Transportation, Big Data & Smart City, 2015, pp. 8-11,
[CrossRef] [Web of Science Times Cited 2] [SCOPUS Times Cited 4]


[10] Tan C., Chen W.,"Design of a Over-Temperature Protection Circuit for Power Management Chip", Journal of Hunan University of Technology, 2009-05

[11] Wu J., Zou X.C.,"An Improved Thermal-Shutdown Circuit with High Precision and Low Power Consumption", Microelectronics & Computer, 2009-02

[12] A. Dutta, S. Alampally, "DFT Implementations for Striking the Right Balance between Test Cost and Test Quality for Automotive SOCs", IEEE International Test Conference, 2008, pp. 1-10,
[CrossRef]


[13] B. Peng, I-Y Chen, "IC HTOL Stress Condition Optimization", Defect and Fault Tolerance in VLSI Systems, 19th IEEE International Symposium, 2004, pp 272-279,
[CrossRef] [Web of Science Times Cited 10] [SCOPUS Times Cited 14]


[14] Uprating Semiconductors for High-Temperature Applications, TN-00-18, Micron Tehnology Inc., Idaho, 2004, pp. 1-14

[15] P. Brokaw, J. Audy, "Low voltage current mirror and CTAT current source and method ", US5982201 A, 1998

[16] Kerns, D.V., Jr., "Optimization of the peaking current source", Solid-State Circuits, IEEE Journal, 1986, vol. 21, pp. 587-590,
[CrossRef] [Web of Science Times Cited 15] [SCOPUS Times Cited 19]


[17] Cheng, M.-H., Wu, Z. -W, "Low-power low-voltage reference using peaking current mirror circuit", Electronics Letters, IET, 2015, vol. 41, pp. 572-573,
[CrossRef] [Web of Science Times Cited 32] [SCOPUS Times Cited 47]




References Weight

Web of Science® Citations for all references: 76 TCR
SCOPUS® Citations for all references: 113 TCR

Web of Science® Average Citations per reference: 4 ACR
SCOPUS® Average Citations per reference: 6 ACR

TCR = Total Citations for References / ACR = Average Citations per Reference

We introduced in 2010 - for the first time in scientific publishing, the term "References Weight", as a quantitative indication of the quality ... Read more

Citations for references updated on 2024-04-19 03:10 in 60 seconds.




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Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania


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