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Minimum Field Requirements for Spin-Polarized Current Assisted Switching of Magnetization in Nanostructures with Uniaxial Anisotropy
DIMIAN, M., GINDULESCU, A., ACHOLO, C.Author keywords
magnetic memory, spintronics, Landau-Lifshitz equation, bifurcation theory
Information
This paper appears in: Advances in Electrical and Computer Engineering
Available online: 2009-02-03
Volume 9, Issue 1, Year 2009, On page(s): 3 - 7
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2009.01001
Thomson Reuters Accession Number: WOS:000264815300001
Abstract
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Stefan cel Mare University of Suceava, Romania
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Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania
All rights reserved: Advances in Electrical and Computer Engineering is a registered trademark of the Stefan cel Mare University of Suceava. No part of this publication may be reproduced, stored in a retrieval system, photocopied, recorded or archived, without the written permission from the Editor. When authors submit their papers for publication, they agree that the copyright for their article be transferred to the Faculty of Electrical Engineering and Computer Science, Stefan cel Mare University of Suceava, Romania, if and only if the articles are accepted for publication. The copyright covers the exclusive rights to reproduce and distribute the article, including reprints and translations.
Permission for other use: The copyright owner's consent does not extend to copying for general distribution, for promotion, for creating new works, or for resale. Specific written permission must be obtained from the Editor for such copying. Direct linking to files hosted on this web-site is strictly prohibited.
Disclaimer: Whilst every effort is made by the publishers and editorial board to see that no inaccurate or misleading data, opinions or statements appear in this journal, they wish to make it clear that all information and opinions formulated in the articles, as well as linguistic accuracy, are the sole responsibility of the author.